Intel 45nm technology overview
Posted: Wed Apr 18, 2007 11:44 pm
http://www.bit-tech.net/hardware/2007/0 ... iew/1.html

On Intel’s 65 nanometre process, gate dielectric walls are 1.2 nanometres thick – that’s equivalent to five atomic layers across, if we put things into perspective. This essentially means that Intel’s processor engineers are designing chips on an almost atomic structure level, and shrinking current silicon dioxide gate dielectric walls even further would exaggerate this even further.